Resist Development Status for Immersion Lithography

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Development of an Immersion Maskless Lithography System

As lithography quickly approaches its limits with current technologies, a host of new ideas is being proposed in hopes of pushing lithography to new levels of performance. The work presented in this thesis explores the use of an immersion scheme to improve the performance of a maskless lithographic technique known as Zone-Plate-Array Lithography (ZPAL). This is believed to be the first implemen...

متن کامل

Nanometer-Scale Patterning on PMMA Resist by Force Microscopy Lithography

Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...

متن کامل

Imaging capabilities of resist in deep ultraviolet liquid immersion interferometric lithography

Liquid immersion lithography (LIL) extends the resolution of optical lithography to meet industry demands into the next decade. Through the use of exposure media such as purified water (n of 1.44 at 193 nm), it is possible to reduce minimum pitches compared with traditional air/vacuum exposures media by a factor of as much as 44%—a full technology node. Beyond this simple observation, there is ...

متن کامل

Novel Resist Materials for next Generation Lithography

........................................................................................................................................................ ii Acknowledgments ....................................................................................................................................... iii Publications............................................................................

متن کامل

Metallic resist for phase-change lithography

Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-change lithography, which uses semiconductor-based resists such as chalcogenide Ge₂Sb₂Te₅ films, wa...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Photopolymer Science and Technology

سال: 2005

ISSN: 0914-9244,1349-6336

DOI: 10.2494/photopolymer.18.641